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IC-Hersteller Transphorm

Transphorm TPH3206PSB | Demoboard TDINV 3 000 W 0 5 0

650V 150mΩ GaN FET in TO-220

Details

TopologieLeistungsfaktor-Korrektur
Eingangsspannung0-400 V
Ausgang 11000 V
IC-Revision2.0

Beschreibung

The TDINV1000P100 1kW inverter evaluation kit provides an easy way to evaluate the performance advantages of GaN FETs in various inverter applications, such as solar and UPS. The kit provides the main features of a single-phase inverter in a proven, functional configuration, operating at or above 100kHz. At the core of the inverter are four 150mΩ GaN FETs configured as a full bridge and includes flexible microcontroller options. The TDINV1000P100-KIT is for evaluation purposes only.

Eigenschaften

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
  • Intrinsic lifetime tests
  • Wide gate safety margin
  • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Typische Anwendungen

  • Datacom
  • Broad industrial
  • Servo motor
  • PV inverter

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCTol. CVR
(V (DC))
BauformBetriebstemperaturQ
(MHz)
RISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
Technische Artikelnummer Muster
885012006008SPEC
6 Dateien WCAP-CSGP MLCCs 10 V(DC)100 pF ±5% 10 0603 -55 bis zu +125 °C 100010 GΩ NP0 Klasse I 1.6 0.8 0.8 0.4 NP00603101J010DFCT10000
885012008014SPEC
6 Dateien WCAP-CSGP MLCCs 16 V(DC)220 pF ±5% 16 1206 -55 bis zu +125 °C 100010 GΩ NP0 Klasse I 3.2 1.6 0.8 0.6 NP01206221J016DFCT10000
Artikel Nr. Daten­blatt Simu­lation
885012006008SPEC
885012008014SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCTol. CVR
(V (DC))
BauformBetriebstemperaturQ
(MHz)
RISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
Technische Artikelnummer Muster