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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 2.7-5.5 V |
| Ausgang 1 | 1.8 V / 2 A |
| IC-Revision | UG026.1 |
Beschreibung
The ISL800xxxDEMO1Z boards are intended for use byindividuals with requirements for point-of-load applicationssourcing from 2.7V to 5.5V. The ISL800xxxDEMO1Z boards areused to demonstrate the performance of the ISL80020,ISL80020A, ISL80015, and ISL80015A low quiescent currentmode converter.These devices are offered in an 8 Ld 2mmx2mm TDFNpackage with 1mm maximum height. The complete converteroccupies less than 64mm2 area.
Eigenschaften
- Small, compact design
- VIN range of 2.7V to 5.5V
- IOUT maximum is 2A or 1.5A
- Switching frequency is 1MHz or 2MHz
- Negative current protection
- Internal soft-start and soft-stop
- Overcurrent and short-circuit protection
- Over-temperature/thermal protection
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LHMI SMT Speicherdrossel, 1.2 µH, 5.85 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität1.2 µH | Performance Nennstrom5.85 A | Sättigungsstrom 16.3 A | Sättigungsstrom @ 30%11.6 A | Gleichstromwiderstand30 mΩ | Eigenresonanzfrequenz71 MHz | MontageartSMT | ||||
| WE-LHMI SMT Speicherdrossel, 2.2 µH, 4.05 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität2.2 µH | Performance Nennstrom4.05 A | Sättigungsstrom 14.45 A | Sättigungsstrom @ 30%8.4 A | Gleichstromwiderstand61 mΩ | Eigenresonanzfrequenz49 MHz | MontageartSMT |