IC-Hersteller Infineon Technologies

IC-Hersteller (103)

Infineon Technologies XDPP1100 | Demoboard REF_600W_FBFB_XDPP1100

48V – 12V fully regulated isolated 1/4th brick module using digital control

Details

TopologieGegentaktwandler (Vollbrücken)
Eingangsspannung36-75 V
Ausgang 112 V / 50 A
IC-Revision1.0

Beschreibung

The REF_600W_FBFB_XDPP1100 is a system solution for telecom isolated DC-DC power modules that achieves 96% peak efficiency in DOSA standard quarter brick form factors. This reference design introduces a secondary side digital control and hard switching full-bridge topology delivering 12V/600W of output power. It operates across a wide range of input voltages (36V - 72V). The achieved power density is 22W/cm³ (360 W/in³), which is enabled by the use of the XDPP1100 digital controller, OptiMOS™ MOSFETs and an EiceDRIVER™ gate driver IC.

Eigenschaften

  • Digital controlled isolated brick converter
  • Voltage mode control with flux balancing
  • Fast line and load transient response
  • PMBus™ and I2C communication
  • Voltage mode control with transformer flux walking protection
  • Best in class feed-forward response
  • Supports active current sharing between multiple modules
  • Smoother pre-bias start-up
  • Output voltage accuracy +/-1% over full temperature range -40°C to 125°C

Typische Anwendungen

  • Industrial 4.0
  • Isolated DC/DC brick module
  • Telecom infrastructure
  • Server motherboard / 48V Computing and datacenter SMPS

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
λDom typ.(nm)
Farbe
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chiptechnologie
50% typ.(°)
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Grün
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
dominante Wellenlänge [typ.]525 nm
FarbeGrün 
Spitzen-Wellenlänge [typ.]515 nm
Lichtstärke [typ.]430 mcd
Durchlassspannung [typ.]3.2 V
ChiptechnologieInGaN 
Abstrahlwinkel Phi 0° [typ.]140 °
WE-HCI SMT-Hochstrominduktivität, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität0.47 µH
Performance Nennstrom54.9 A
Sättigungsstrom 125 A
Sättigungsstrom @ 30%50 A
Gleichstromwiderstand0.67 mΩ
Eigenresonanzfrequenz100 MHz
MaterialWE-PERM