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Infineon Technologies 1EDI60N12AF

1EDI EiceDRIVER™ Compact Separate output variant for MOSFET

Details

TopologieLeistungsfaktor-Korrektur
Eingangsspannung85-265 V
Schaltfrequenz4000 kHz
Ausgang 1400 V / 6.25 A
IC-Revision2.0

Beschreibung

The 1EDI60N12AF is a galvanically isolated single channel MOSFET driver in a PG-DSO-8-51 package that provides output currents of at least 6 A at separated output pins. The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to support even 3.3 V microcontroller. Data transfer across the isolation barrier is realized by the Coreless Transformer Technology. Every driver family member comes with logic input and driver output under voltage lockout (UVLO) and activeshutdown.

Eigenschaften

  • Single channel isolated MOSFET Driver
  • Input to output isolation voltage up to 1200 V
  • For high voltage power MOSFETs
  • Up to 10 A typical peak current at rail-to-rail outputs
  • Separate source and sink outputs

Typische Anwendungen

  • UPS-Systems
  • Solar MPPT boost converter
  • Welding
  • AC and Brushless DC Motor Drives
  • High Voltage PFC, DC/DC-Converter and DC/AC-Inverter
  • Induction Heating Resonant Application

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Downloads ProduktserieL1
(µH)
IR 1
(A)
ISAT 1
(A)
RDC1 typ
(Ω)
RDC1 max.
(Ω)
fres 1
(MHz)
IR
(A)
L
(µH)
RDC max.
(Ω)
VR
(V (AC))
VT
(V (AC))
MontageartBauform Muster
74454133SPEC
9 Dateien WE-PD3 SMT-Speicherdrossel 33 1.2 1.8 0.127 0.16 12 1.2 33 0.16 L
744824101SPEC
9 Dateien Design Kit WE-CMB / WE-ExB / WE-CMBNC Stromkompensierte Netzdrosseln 1000 10 0.007 250 1500 THT L
Artikel Nr. Daten­blatt
74454133SPEC
744824101SPEC
Muster
Artikel Nr. Daten­blatt Downloads ProduktserieL1
(µH)
IR 1
(A)
ISAT 1
(A)
RDC1 typ
(Ω)
RDC1 max.
(Ω)
fres 1
(MHz)
IR
(A)
L
(µH)
RDC max.
(Ω)
VR
(V (AC))
VT
(V (AC))
MontageartBauform Muster