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Details
| Topologie | Abwärtswandler |
| Ausgang 1 | 100 V / 6 A |
Beschreibung
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Eigenschaften
- Ultra High Efficiency
- Ultra Low RDS(on)
- Ultra low QG
- Ultra small footprint
Typische Anwendungen
- Hard Switched and High Frequency Circuits
- Class D Audio
- High Speed DC-DC conversion
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | Material | LR(µH) | fres(MHz) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCC SMT-Hochstrominduktivität, 1 µH, 18.8 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCC SMT-Hochstrominduktivität | Induktivität1 µH | Performance Nennstrom18.8 A | Sättigungsstrom 122.9 A | Sättigungsstrom @ 30%25.1 A | Gleichstromwiderstand3.9 mΩ | MaterialFerrite | Nenninduktivität0.97 µH | Eigenresonanzfrequenz147 MHz | ||||
 | WE-HCC SMT-Hochstrominduktivität, 2.2 µH, 21.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCC SMT-Hochstrominduktivität | Induktivität2.2 µH | Performance Nennstrom21.6 A | Sättigungsstrom 124.8 A | Sättigungsstrom @ 30%27.2 A | Gleichstromwiderstand4.3 mΩ | MaterialFerrite | Nenninduktivität2 µH | Eigenresonanzfrequenz64 MHz |