850 nm, 845.0, 85 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
85 mW/sr
Forward Voltage [typ.]
1.5 V
Viewing Angle Phi 0° [typ.]
35 °
Chip Technology
AlGaAs
850 nm, 845.0, 60 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
60 mW/sr
Forward Voltage [typ.]
1.5 V
Viewing Angle Phi 0° [typ.]
35 °
Chip Technology
AlGaAs
850 nm, 845.0, 2 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
2 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
130 °
Chip Technology
AlGaAs
850 nm, 845.0, 20 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
20 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
850 nm, 845.0, 2 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
2 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
130 °
Chip Technology
AlGaAs
850 nm, 845.0, 9 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
9 mW/sr
Forward Voltage [typ.]
1.5 V
Viewing Angle Phi 0° [typ.]
120 °
Chip Technology
AlGaAs
850 nm, 845.0, 5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
5 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
90 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
5 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
110 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 11 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
11 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
45 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 6 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
6 mW/sr
Forward Voltage [typ.]
1.6 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 1.5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
1.5 mW/sr
Forward Voltage [typ.]
1.6 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 12 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
12 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
20 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 20 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
20 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 1.2 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
1.2 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 1.5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
1.5 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 850.0, 2.5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
850.0
Radiant Intensity [typ.]
2.5 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 60 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
60 mW/sr
Forward Voltage [typ.]
1.5 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 85 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
85 mW/sr
Forward Voltage [typ.]
1.5 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 160 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
160 mW/sr
Forward Voltage [typ.]
1.8 V
Viewing Angle Phi 0° [typ.]
120 °
Chip Technology
AlInGaAs
Design Kit
–
850 nm, 845.0, 350 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
350 mW/sr
Forward Voltage [typ.]
3.2 V
Viewing Angle Phi 0° [typ.]
120 °
Chip Technology
AlInGaAs
Design Kit
–
850 nm, 845.0, 400 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
400 mW/sr
Forward Voltage [typ.]
1.8 V
Viewing Angle Phi 0° [typ.]
90 °
Chip Technology
InAlGaAs
Design Kit
–
850 nm, 845.0, 800 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
800 mW/sr
Forward Voltage [typ.]
3.2 V
Viewing Angle Phi 0° [typ.]
90 °
Chip Technology
InAlGaAs
Design Kit
–
850 nm, 855.0, 260 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
855.0
Radiant Intensity [typ.]
260 mW/sr
Forward Voltage [typ.]
3.2 V
Viewing Angle Phi 0° [typ.]
150 °
Chip Technology
InAlGaAs
Design Kit
–
850 nm, 855.0, 180 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
855.0
Radiant Intensity [typ.]
180 mW/sr
Forward Voltage [typ.]
1.8 V
Viewing Angle Phi 0° [typ.]
150 °
Chip Technology
InAlGaAs
Design Kit
–
850 nm, 845.0, 150 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
150 mW/sr
Forward Voltage [typ.]
1.5 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 60 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
60 mW/sr
Forward Voltage [typ.]
1.5 V
Viewing Angle Phi 0° [typ.]
60 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 40 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
40 mW/sr
Forward Voltage [typ.]
1.5 V
Viewing Angle Phi 0° [typ.]
120 °
Chip Technology
AlGaAs
Design Kit
–
850 nm, 845.0, 5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
850 nm
Centroid Wavelength [max.]
845.0
Radiant Intensity [typ.]
5 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
60 °
Chip Technology
AlGaAs
Design Kit
–
855 nm, 850.0, 350 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
855 nm
Centroid Wavelength [max.]
850.0
Radiant Intensity [typ.]
350 mW/sr
Forward Voltage [typ.]
2 V
Viewing Angle Phi 0° [typ.]
90 °
Chip Technology
AlGaAs
855 nm, 850.0, 250 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
855 nm
Centroid Wavelength [max.]
850.0
Radiant Intensity [typ.]
250 mW/sr
Forward Voltage [typ.]
2 V
Viewing Angle Phi 0° [typ.]
130 °
Chip Technology
AlGaAs
940 nm, 940.0, 75 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
75 mW/sr
Forward Voltage [typ.]
1.3 V
Viewing Angle Phi 0° [typ.]
35 °
Chip Technology
AlGaAs
940 nm, 940.0, 30 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
30 mW/sr
Forward Voltage [typ.]
1.3 V
Viewing Angle Phi 0° [typ.]
35 °
Chip Technology
AlGaAs
940 nm, 940.0, 1 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
1 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
150 °
Chip Technology
AlGaAs
940 nm, 940.0, 5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
5 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
940 nm, 940.0, 0.8 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
0.8 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
150 °
Chip Technology
AlGaAs
940 nm, 940.0, 8 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
8 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
120 °
Chip Technology
AlGaAs
940 nm, 940.0, 5.5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
5.5 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
90 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 1.5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
1.5 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
150 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 6 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
6 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
60 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 5 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
5 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 1 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
1 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 6 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
6 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
20 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 5 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
5 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 1 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
1 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 1 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
1 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 1 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
1 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
140 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 30 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
30 mW/sr
Forward Voltage [typ.]
1.3 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 30 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
30 mW/sr
Forward Voltage [typ.]
1.3 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 120 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
120 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
30 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 50 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
50 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
60 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 30 mW/sr
Simulation
–
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
30 mW/sr
Forward Voltage [typ.]
1.4 V
Viewing Angle Phi 0° [typ.]
120 °
Chip Technology
AlGaAs
Design Kit
–
940 nm, 940.0, 2 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
940 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
2 mW/sr
Forward Voltage [typ.]
1.2 V
Viewing Angle Phi 0° [typ.]
60 °
Chip Technology
AlGaAs
Design Kit
–
945 nm, 940.0, 300 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
945 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
300 mW/sr
Forward Voltage [typ.]
1.9 V
Viewing Angle Phi 0° [typ.]
90 °
Chip Technology
AlGaAs
945 nm, 940.0, 220 mW/sr
Status
Active
i
| Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.]
945 nm
Centroid Wavelength [max.]
940.0
Radiant Intensity [typ.]
220 mW/sr
Forward Voltage [typ.]
1.9 V
Viewing Angle Phi 0° [typ.]
130 °
Chip Technology
AlGaAs
