 | 15411485AA370 | 850 nm, 845.0, 2 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]2 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]130 ° | Chip TechnologyAlGaAs | | |
 | 15410285AA170 | 850 nm, 845.0, 5 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]5 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]110 ° | Chip TechnologyAlGaAs | Design Kit – | |
 | 15411085A4570 | 850 nm, 845.0, 11 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]11 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]45 ° | Chip TechnologyAlGaAs | Design Kit – | |
 | 15404085BA470 | 850 nm, 845.0, 1.5 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]1.5 mW/sr | Forward Voltage [typ.]1.6 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | Design Kit – | |
 | 15412085A2070 | 850 nm, 845.0, 12 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]12 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]20 ° | Chip TechnologyAlGaAs | Design Kit – | |
 | 15411494AA570 | 940 nm, 940.0, 1 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]150 ° | Chip TechnologyAlGaAs | | |
 | 15410294AA570 | 940 nm, 940.0, 1.5 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1.5 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]150 ° | Chip TechnologyAlGaAs | Design Kit – | |
 | 15411094A6070 | 940 nm, 940.0, 6 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]6 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]60 ° | Chip TechnologyAlGaAs | Design Kit – | |
 | 15404094BA470 | 940 nm, 940.0, 1 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | Design Kit – | |
 | 15412094A2070 | 940 nm, 940.0, 6 mW/sr | | | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]6 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]20 ° | Chip TechnologyAlGaAs | Design Kit – | |