WE-GDT Gate-Drive-Transformer
SizeDimen­sions3DL
(mm)
W
(mm)
H
(mm)
Mount
EP5
7 8.5 6 SMT
ER9.5
10 12.07 5.97 SMT
1210
10.26 12.98 5.64 SMT

Characteristics

  • Compact package sizes: EP5, ER9.5, 1210 Toroid
  • 1 or 2 secondary windings
  • 7 different Translations
  • Insulation test voltages from 1500 VDC up to 2100 VDC

Applications

  • Suitable for signal and power application
  • Designed for gate drive application high efficient SMPS
  • Synchronous rectification
  • Motor drive control
  • Telecom base station power supplies

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Products

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EP5
ER9.5
1210
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Order Code
Data­sheet
Downloads
Status
n
L(µH)
∫Udt(µVs)
VT(V (DC))
CWW 1(pF)
LS(µH)
Size
Samples
WE-GDT Gate-Drive-Transformer
760301105
1:1:1, 260 µH, 25.2 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1:1 
Inductance260 µH
Voltage-µSecond25.2 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance9 pF
Leakage Inductance1.7 µH
SizeEP5 
WE-GDT Gate-Drive-Transformer
760301106
1:1, 370 µH, 30.2 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1 
Inductance370 µH
Voltage-µSecond30.2 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance10 pF
Leakage Inductance1.8 µH
SizeEP5 
WE-GDT Gate-Drive-Transformer
760301107
1.5:1, 650 µH, 40.8 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1.5:1 
Inductance650 µH
Voltage-µSecond40.8 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance9 pF
Leakage Inductance2.9 µH
SizeEP5 
WE-GDT Gate-Drive-Transformer
750316094
1:1:5:5, 261 µH, 28 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1:5:5 
Inductance261 µH
Voltage-µSecond28 µVs
Insulation Test Voltage2100 V (DC)
Interwinding Capacitance90 pF
Leakage Inductance0.4 µH
Size1210 
WE-GDT Gate-Drive-Transformer
750316093
1:1:2:2, 1710 µH, 70 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1:2:2 
Inductance1710 µH
Voltage-µSecond70 µVs
Insulation Test Voltage2100 V (DC)
Interwinding Capacitance100 pF
Leakage Inductance1.5 µH
Size1210 
WE-GDT Gate-Drive-Transformer
750311063
1:1, 600 µH, 28.7 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1 
Inductance600 µH
Voltage-µSecond28.7 µVs
Insulation Test Voltage2000 V (DC)
Interwinding Capacitance12 pF
Leakage Inductance1.4 µH
SizeER9.5/5 
WE-GDT Gate-Drive-Transformer
760301103
2.5:1:1, 350 µH, 29.4 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.5:1:1 
Inductance350 µH
Voltage-µSecond29.4 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance7 pF
Leakage Inductance2.3 µH
SizeEP5 
WE-GDT Gate-Drive-Transformer
760301104
2:1:1, 330 µH, 28.6 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2:1:1 
Inductance330 µH
Voltage-µSecond28.6 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance7 pF
Leakage Inductance1.9 µH
SizeEP5 
WE-GDT Gate-Drive-Transformer
760301108
2.5:1, 460 µH, 33.6 µVs
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.5:1 
Inductance460 µH
Voltage-µSecond33.6 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance9 pF
Leakage Inductance2.3 µH
SizeEP5