Design Kit WE-MI Multilayer SMT Inductors
Order Code 744790
Characteristics
- Sample kit contains components of the SMT Multilayer Inductors WE-MI
- Sizes 0603, 0805 and 1206
- Inductance values from 0.047 µH to 22 µH
- 3 types, 38 values and 1140 components in one sample case
- Free refill
Applications
- Filter switches
- Oscillators
- Adjustment networks
- Discretely built T- or π-Filter
Products
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Reset allOrder Code | Datasheet | Downloads | Status | Product series | L(µH) | IR(mA) | Q(%) | Test Condition Q | RDC max.(Ω) | fres(MHz) | Samples |
|---|---|---|---|---|---|---|---|---|---|---|---|
| WE-MI SMT Multilayer Inductor, 0.047 µH, 50 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.047 µH | Rated Current50 mA | Q-Factor10 % | Q-Factor50 MHz | DC Resistance0.25 Ω | Self Resonant Frequency260 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.047 µH, 300 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.047 µH | Rated Current300 mA | Q-Factor20 % | Q-Factor50 MHz | DC Resistance0.2 Ω | Self Resonant Frequency320 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.1 µH, 50 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.1 µH | Rated Current50 mA | Q-Factor15 % | Q-Factor25 MHz | DC Resistance0.5 Ω | Self Resonant Frequency240 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.1 µH, 250 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.1 µH | Rated Current250 mA | Q-Factor20 % | Q-Factor25 MHz | DC Resistance0.3 Ω | Self Resonant Frequency255 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.1 µH, 250 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.1 µH | Rated Current250 mA | Q-Factor20 % | Q-Factor25 MHz | DC Resistance0.25 Ω | Self Resonant Frequency270 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.22 µH, 50 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.22 µH | Rated Current50 mA | Q-Factor15 % | Q-Factor25 MHz | DC Resistance0.8 Ω | Self Resonant Frequency170 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.22 µH, 250 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.22 µH | Rated Current250 mA | Q-Factor20 % | Q-Factor25 MHz | DC Resistance0.5 Ω | Self Resonant Frequency195 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.22 µH, 250 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.22 µH | Rated Current250 mA | Q-Factor20 % | Q-Factor25 MHz | DC Resistance0.4 Ω | Self Resonant Frequency170 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.47 µH, 35 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.47 µH | Rated Current35 mA | Q-Factor15 % | Q-Factor25 MHz | DC Resistance1 Ω | Self Resonant Frequency120 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.47 µH, 200 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.47 µH | Rated Current200 mA | Q-Factor25 % | Q-Factor25 MHz | DC Resistance0.6 Ω | Self Resonant Frequency140 MHz | |||
| WE-MI SMT Multilayer Inductor, 0.47 µH, 200 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance0.47 µH | Rated Current200 mA | Q-Factor25 % | Q-Factor25 MHz | DC Resistance0.6 Ω | Self Resonant Frequency125 MHz | |||
| WE-MI SMT Multilayer Inductor, 1 µH, 25 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance1 µH | Rated Current25 mA | Q-Factor35 % | Q-Factor10 MHz | DC Resistance0.6 Ω | Self Resonant Frequency85 MHz | |||
| WE-MI SMT Multilayer Inductor, 1 µH, 50 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance1 µH | Rated Current50 mA | Q-Factor45 % | Q-Factor10 MHz | DC Resistance0.4 Ω | Self Resonant Frequency85 MHz | |||
| WE-MI SMT Multilayer Inductor, 1 µH, 100 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance1 µH | Rated Current100 mA | Q-Factor45 % | Q-Factor10 MHz | DC Resistance0.4 Ω | Self Resonant Frequency87 MHz | |||
| WE-MI SMT Multilayer Inductor, 2.2 µH, 15 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance2.2 µH | Rated Current15 mA | Q-Factor35 % | Q-Factor10 MHz | DC Resistance1 Ω | Self Resonant Frequency55 MHz | |||
| WE-MI SMT Multilayer Inductor, 2.2 µH, 30 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance2.2 µH | Rated Current30 mA | Q-Factor45 % | Q-Factor10 MHz | DC Resistance0.6 Ω | Self Resonant Frequency55 MHz | |||
| WE-MI SMT Multilayer Inductor, 2.2 µH, 50 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance2.2 µH | Rated Current50 mA | Q-Factor45 % | Q-Factor10 MHz | DC Resistance0.6 Ω | Self Resonant Frequency58 MHz | |||
| WE-MI SMT Multilayer Inductor, 3.3 µH, 15 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance3.3 µH | Rated Current15 mA | Q-Factor35 % | Q-Factor10 MHz | DC Resistance1.4 Ω | Self Resonant Frequency45 MHz | |||
| WE-MI SMT Multilayer Inductor, 3.3 µH, 30 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance3.3 µH | Rated Current30 mA | Q-Factor45 % | Q-Factor10 MHz | DC Resistance0.8 Ω | Self Resonant Frequency45 MHz | |||
| WE-MI SMT Multilayer Inductor, 3.3 µH, 50 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance3.3 µH | Rated Current50 mA | Q-Factor45 % | Q-Factor10 MHz | DC Resistance0.7 Ω | Self Resonant Frequency48 MHz | |||
| WE-MI SMT Multilayer Inductor, 4.7 µH, 15 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance4.7 µH | Rated Current15 mA | Q-Factor35 % | Q-Factor10 MHz | DC Resistance1.8 Ω | Self Resonant Frequency40 MHz | |||
| WE-MI SMT Multilayer Inductor, 4.7 µH, 30 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance4.7 µH | Rated Current30 mA | Q-Factor45 % | Q-Factor10 MHz | DC Resistance1 Ω | Self Resonant Frequency41 MHz | |||
| WE-MI SMT Multilayer Inductor, 4.7 µH, 50 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance4.7 µH | Rated Current50 mA | Q-Factor45 % | Q-Factor10 MHz | DC Resistance0.9 Ω | Self Resonant Frequency41 MHz | |||
| WE-MI SMT Multilayer Inductor, 6.8 µH, 5 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance6.8 µH | Rated Current5 mA | Q-Factor35 % | Q-Factor4 MHz | DC Resistance1.7 Ω | Self Resonant Frequency20 MHz | |||
| WE-MI SMT Multilayer Inductor, 6.8 µH, 25 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance6.8 µH | Rated Current25 mA | Q-Factor50 % | Q-Factor4 MHz | DC Resistance0.9 Ω | Self Resonant Frequency29 MHz | |||
| WE-MI SMT Multilayer Inductor, 10 µH, 3 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance10 µH | Rated Current3 mA | Q-Factor30 % | Q-Factor2 MHz | DC Resistance1.85 Ω | Self Resonant Frequency17 MHz | |||
| WE-MI SMT Multilayer Inductor, 10 µH, 15 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance10 µH | Rated Current15 mA | Q-Factor50 % | Q-Factor2 MHz | DC Resistance1 Ω | Self Resonant Frequency28 MHz | |||
| WE-MI SMT Multilayer Inductor, 10 µH, 25 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance10 µH | Rated Current25 mA | Q-Factor50 % | Q-Factor2 MHz | DC Resistance0.6 Ω | Self Resonant Frequency26 MHz | |||
| WE-MI SMT Multilayer Inductor, 12 µH, 15 mA | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MI SMT Multilayer Inductor | Inductance12 µH | Rated Current15 mA | Q-Factor50 % | Q-Factor2 MHz | DC Resistance1.1 Ω | Self Resonant Frequency26 MHz |