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Cambridge GaN Devices CGD65B200S2 | Demoboard CGD-ASYEVB00901-01 / CGD-UG2202
650 V / 200 mOhm GaN HEMT with ICeGaN™ Gate and Current Sense
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 0-18 V |
| Output 1 | 650 V |
| IC revision | 1 |
Description
The Half Bridge Evaluation Board allows ICeGaN variants to be used with a readily available silicon MOSFET driver, demonstrating state of the art performance combined with easy implementation of ICeGaN into an existing design.This evaluation board is available in a number of variants with matched high side & low side devices, with either 55mΩ, 130mΩ 5x6, 130mΩ 8x8, 200mΩ 5x6 or 240mΩ 5x6 650 V GaN HEMTs and variable gate drive voltage from 9 V to 20 V.All board functionality is identical for all variants.
Features
- 2 x 650 V CGD Enhancement Mode GaN HEMTs with ICeGaN™ Gate
- 2 x Silicon Labs SI8271AB-IS Isolated Gate Driver (1 per side), adjustable drive amplitude 9-20 V
Typical applications
- LED lighting
- PSUs, Industrial SMPS and inverters
- Gaming PSUs, PC power
More information
Products
| Order Code | Datasheet | Downloads | Product series | Pins | Rows | Gender | Type | IR (A) | Packaging | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | 61000421121 | SPEC | 6 files | WR-PHD 2.54 mm SMT Dual Pin Header | 4 | Dual | Pin Header | Straight | 3 | Tube |
| Order Code | Datasheet | |
|---|---|---|
| 61000421121 | SPEC |
| Samples |
|---|
| Order Code | Datasheet | Downloads | Product series | Pins | Rows | Gender | Type | IR (A) | Packaging | Samples |
|---|