IC-Hersteller EPC

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EPC EPC2023 | Demoboard LMG5200POLEVM-10A

General TI High Voltage Evaluation User Safety Guidelines

Details

TopologieGegentaktwandler (Halbbrücken)
Eingangsspannung36-75 V
Ausgang 10.5 V / 50 A
IC-RevisionD

Beschreibung

The LMG5200POLEVM-10 EVM is designed to evaluate the LMG5200 GaN power stage and the TPS53632G half-bridge point-of-load controller in a 48-V to 1-V applicationThis EVM implements the 48- V to 1-V converter as a single-stage hard-switched half-bridge with current-doubler rectifierThis topology efficiently supports a high step-down ratio while providing significant output current and fast transient responseThe TPS53632G controller uses a D-CAP+ hysteretic control architecture to achieve superior transient responseThe TPS53632G is a variant of the TPS53632 controller, modified to support the half-bridge topology used in this EVMThe LMG5200 is an 80-V, 10-A half-bridge power stage using gallium-nitride (GaN) transistorsGaN offers superior switching performance to traditional silicon MOSFETs due to its lack of reverse-recovery effect and reduced input and output capacitanceBy using a GaN module, this application achieves high efficiency while operating in a hard-switched configurationThis EVM guide describes correct operation and measurement of the EVM, as well as the EVM construction and typical performance

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
L
(nH)
LR
(nH)
IR
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC
(mΩ)
fres
(MHz)
Material Muster
150060GS75000SPEC
25 Dateien WL-SMCW SMT Mono-color Chip LED Waterclear 525 Grün 515 430 3.2 InGaN 140
744308025SPEC
8 Dateien WE-HCM SMT-Hochstrominduktivität 250 246 25 41.6 46.5 0.37 40 MnZn
Artikel Nr. Daten­blatt Simu­lation
150060GS75000SPEC
744308025SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
L
(nH)
LR
(nH)
IR
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC
(mΩ)
fres
(MHz)
Material Muster