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WE-GDT Gate-Drive-Transformer
WE-GDT Gate-Drive-Transformer
n 2.5:1:1 to 1:1∫Udt 25.2 µVs to 70 Vµs
WE-GDTI Gate-Drive-Transformer
WE-GDTI Gate-Drive-Transformer
n 1:1:1 to 3:1:1∫Udt 99 to 140 µVs
WE-AGDT Auxiliary Gate Drive Transformer
WE-AGDT Auxiliary Gate Drive Transformer
n 3.5:3.5:1 to 1:1.29∫Udt 36 to 72 µVs
Order Code
Data­sheet
Simu­lation
Downloads
Status
n
∫Udt(µVs)
VT(V (DC))
CWW 1(pF)
LS(µH)
Size
Product series
Reference Design
Samples
WE-GDT Gate-Drive-Transformer1:1:1, 25.2 µVs, 1500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1:1 
Voltage-µSecond25.2 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance9 pF
Leakage Inductance1.7 µH
SizeEP5 
Reference Design
WE-GDT Gate-Drive-Transformer1:1, 30.2 µVs, 1500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1 
Voltage-µSecond30.2 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance10 pF
Leakage Inductance1.8 µH
SizeEP5 
Reference Design
WE-GDT Gate-Drive-Transformer1.5:1, 40.8 µVs, 1500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1.5:1 
Voltage-µSecond40.8 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance9 pF
Leakage Inductance2.9 µH
SizeEP5 
Reference Design
WE-GDT Gate-Drive-Transformer1:1:1, 102 µVs, 2500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1:1 
Voltage-µSecond102 µVs
Insulation Test Voltage2500 V (DC)
Interwinding Capacitance11 pF
Leakage Inductance4 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:1, 102 µVs, 2500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1 
Voltage-µSecond102 µVs
Insulation Test Voltage2500 V (DC)
Interwinding Capacitance11 pF
Leakage Inductance4 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1.5:1:1, 99 µVs, 2500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1.5:1:1 
Voltage-µSecond99 µVs
Insulation Test Voltage2500 V (DC)
Interwinding Capacitance11 pF
Leakage Inductance3.5 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:1:5:5, 28 µVs, 2100 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1:5:5 
Voltage-µSecond28 µVs
Insulation Test Voltage2100 V (DC)
Interwinding Capacitance90 pF
Leakage Inductance0.4 µH
Size1210 
Reference Design
WE-GDT Gate-Drive-Transformer1:1:2:2, 70 µVs, 2100 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1:2:2 
Voltage-µSecond70 µVs
Insulation Test Voltage2100 V (DC)
Interwinding Capacitance100 pF
Leakage Inductance1.5 µH
Size1210 
Reference Design
WE-GDT Gate-Drive-Transformer1:1.2, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1.2 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance8.2 pF
Leakage Inductance0.7 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:2, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:2 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance6.8 pF
Leakage Inductance0.55 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:2, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:2 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance6.8 pF
Leakage Inductance0.5 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:1.67, 36 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1.67 
Voltage-µSecond36 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance0.68 pF
Leakage Inductance0.55 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1.56:3.89:1:1:1, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1.56:3.89:1:1:1 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance6.4 pF
Leakage Inductance1 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:1, 60 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1 
Voltage-µSecond60 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance1.3 pF
Leakage Inductance1.5 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1.2:2:1, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1.2:2:1 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance3.25 pF
Leakage Inductance0.24 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:2, 72 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:2 
Voltage-µSecond72 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance2.1 pF
Leakage Inductance3 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1.8:3.6:1, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1.8:3.6:1 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance7.3 pF
Leakage Inductance0.5 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:1.57, 40 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1.57 
Voltage-µSecond40 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance2 pF
Leakage Inductance0.85 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1.83:1, 64 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1.83:1 
Voltage-µSecond64 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance2 pF
Leakage Inductance1.9 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1.2:1, 70 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1.2:1 
Voltage-µSecond70 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance2 pF
Leakage Inductance2.2 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:1.08, 70 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1.08 
Voltage-µSecond70 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance2.6 pF
Leakage Inductance2.25 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:1.29, 40 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1.29 
Voltage-µSecond40 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance2.1 pF
Leakage Inductance0.755 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer1:1, 28.7 µVs, 2000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:1 
Voltage-µSecond28.7 µVs
Insulation Test Voltage2000 V (DC)
Interwinding Capacitance12 pF
Leakage Inductance1.4 µH
SizeER9.5/5 
Reference Design
WE-GDT Gate-Drive-Transformer2.5:1:1, 29.4 µVs, 1500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.5:1:1 
Voltage-µSecond29.4 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance7 pF
Leakage Inductance2.3 µH
SizeEP5 
Reference Design
WE-GDT Gate-Drive-Transformer2:1:1, 28.6 µVs, 1500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2:1:1 
Voltage-µSecond28.6 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance7 pF
Leakage Inductance1.9 µH
SizeEP5 
Reference Design
WE-GDT Gate-Drive-Transformer2.5:1, 33.6 µVs, 1500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.5:1 
Voltage-µSecond33.6 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance9 pF
Leakage Inductance2.3 µH
SizeEP5 
Reference Design
WE-GDT Gate-Drive-Transformer2:1:1, 102 µVs, 2500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2:1:1 
Voltage-µSecond102 µVs
Insulation Test Voltage2500 V (DC)
Interwinding Capacitance11 pF
Leakage Inductance4 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer2.5:1:1, 120 µVs, 2500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.5:1:1 
Voltage-µSecond120 µVs
Insulation Test Voltage2500 V (DC)
Interwinding Capacitance11 pF
Leakage Inductance5 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer2.25:3.5:1, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.25:3.5:1 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance7.5 pF
Leakage Inductance0.4 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer2.25:3.5:1, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.25:3.5:1 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance7 pF
Leakage Inductance0.6 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer2:2.86:1.43:1.43:1, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2:2.86:1.43:1.43:1 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance7.8 pF
Leakage Inductance0.7 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer2.25:4.25:1, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.25:4.25:1 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance7.5 pF
Leakage Inductance0.5 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer2.2:1, 64 µVs, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio2.2:1 
Voltage-µSecond64 µVs
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance2 pF
Leakage Inductance1.9 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer3:1:1, 140 µVs, 2500 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio3:1:1 
Voltage-µSecond140 µVs
Insulation Test Voltage2500 V (DC)
Interwinding Capacitance11 pF
Leakage Inductance7.5 µH
SizeEP7 
Reference Design
WE-GDT Gate-Drive-Transformer3.5:3.5:1, –, 4000 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio3.5:3.5:1 
Insulation Test Voltage4000 V (DC)
Interwinding Capacitance7 pF
Leakage Inductance0.6 µH
SizeEP7 
Reference Design