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Gate Drive Transformers

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WE-GDT Gate-Drive-Transformer
WE-GDT Gate-Drive-Transformer
n 2.5:1:1 to 1:1∫Udt 25.2 µVs to 70 Vµs
WE-GDTI Gate-Drive-Transformer
WE-GDTI Gate-Drive-Transformer
n 1:1:1 to 3:1:1∫Udt 99 to 140 µVs
WE-AGDT Auxiliary Gate Drive Transformer
WE-AGDT Auxiliary Gate Drive Transformer
n 3.5:3.5:1 to 1:1.29∫Udt 36 to 72 µVs

High Power in Small Size: WE-AGDT  

WE-AGDT is a small sized power transformer with very low interwinding capacitance and high isolation, optimized for high speed SiC MOSFET and IGBT applications.

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Power Magnetics for SiC-MOSFET Gate Drivers  

Isolated Gate Driver systems control the turn-on and turn-off of power semiconductor devices in switching applications. They provide safety and operating galvanic isolation, optimal gate-source drive voltage levels, a fast drive current and power required for the switching events.

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