Silicon Based Components

Silicon Based Inductive Components

Innovative Components for high integration grade

Würth Elektronik introduces highly integratable inductive components produced on 300mm silicon substrate wafers. Due to the various and different design solutions and possible end applications, we offer this component as a customer-specific solution.

Please get in contact with our technical sales for details and offers or fill out the inquiry request form:

Request form Support Note SN029
Silicon based inductive components

Technology

Layerstack of a slicon based components
Layerstack
  • Silicon as carrier material
  • 25 µm copper traces
  • Laminated magnetic core material
  • Polyimide for insulation
Core material of silicon based inductive components
Core Material
  • Laminated CZT Material optimized for high frequency applications
  • Very narrow BH loop to minimize losses

Design Examples

Silicon Based Power Inductor WE-SBPI
Silicon Based Power Inductor WE-SBPI
Silicon Based Power Transformer WE-SBTR
Silicon Based Power Transformer WE-SBTR

Application Examples

Siliziumbasiertes Bauelement in Leiterplatte integriert
Smartwatch Example – PCB Embedded
Integrated Voltage Regulator
Integrated Voltage Regulator
Photeon Design
Integrated multiphase converter

Integration Options

WLCSP for PCB soldering and package-in-package integration
WLCSP for PCB soldering and package-in-package integration
Bare Die for Wirebonding
Bare Die for Wirebonding
Bare Die Embedding
Bare Die Embedding
Chiplet Integration
Chiplet Integration
MICROVIA Embedding
MICROVIA Embedding
Flip-Chip Embedding
Flip-Chip Embedding

Delivery Options - Full Wafer

Full Wafer Non-Grinded
Full Wafer Non-Grinded
  • 300 mm Silicon Wafer
  • Silicon thickness ~ 400 – 500 µm
  • Total Height: ~ 480 – 580 µm
Full Wafer Grinded
Full Wafer Grinded
  • 300 mm Silicon Wafer
  • Silicon thickness ~ 125 µm
  • Total Height: ~ 200 µm
Full Wafer Ball Drop
Full Wafer Ball Drop
  • 300 mm Silicon Wafer
  • 230 µm Balldrop on Non-Grinded or Grinded
  • Total Height: ~ 420 µm
Full Wafer NiAg finish
Full Wafer NiAg finish
  • 300 mm Silicon Wafer
  • NiAg finish on copper
  • Total Height: ~ 200 µm

Delivery Options - Die

Laser Cut on Blue Foil
Laser Cut on Blue Foil
  • Dies singulated by Laser
  • Placed on blue foil for transportation
Tape & Reel Packaging
Tape & Reel Packaging
  • Singulated Dies placed in Tape & Reel packaging
Photeon Design
Technology Integration
  • Direct implementation of stack up into CMOS process
  • Only possible with matching foundry

Request Process Flow

  1. Request via Sales or Online contact form
  2. Requirement definition meeting with PM and Design Team ~ 1-2 weeks
  3. Feasibility Check / Design suggestion based on FEM (Finite Element Method) simulation ~ 1-2 working days
  4. Verification & Sample Request (MPW run or Single Design Wafer) ~ 3-4 months
  5. Testing & Release
  6. Mass production ready

Inquiry form

Would you like an individual offer for customized silicon based components? Request now!

Please fill out the following form. Our sales representative will contact you as soon as possible after checking the feasibility with the product management.