 | | SPEC850 nm, 845.0, 85 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]85 mW/sr | Forward Voltage [typ.]1.5 V | Viewing Angle Phi 0° [typ.]35 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC850 nm, 845.0, 60 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]60 mW/sr | Forward Voltage [typ.]1.5 V | Viewing Angle Phi 0° [typ.]35 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC850 nm, 845.0, 2 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]2 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]130 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC850 nm, 845.0, 20 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]20 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC850 nm, 845.0, 2 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]2 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]130 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC850 nm, 845.0, 9 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]9 mW/sr | Forward Voltage [typ.]1.5 V | Viewing Angle Phi 0° [typ.]120 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC850 nm, 845.0, 5 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]5 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]90 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 5 mW/sr | | | Downloads26 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]5 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]110 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 11 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]11 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]45 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 6 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]6 mW/sr | Forward Voltage [typ.]1.6 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 1.5 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]1.5 mW/sr | Forward Voltage [typ.]1.6 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 12 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]12 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]20 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 20 mW/sr | Simulation– | | Downloads6 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]20 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 1.2 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]1.2 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 1.5 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]1.5 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 850.0, 2.5 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]850.0 | Radiant Intensity [typ.]2.5 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 60 mW/sr | Simulation– | | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]60 mW/sr | Forward Voltage [typ.]1.5 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 85 mW/sr | Simulation– | | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]85 mW/sr | Forward Voltage [typ.]1.5 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 160 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]160 mW/sr | Forward Voltage [typ.]1.8 V | Viewing Angle Phi 0° [typ.]120 ° | Chip TechnologyAlInGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 350 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]350 mW/sr | Forward Voltage [typ.]3.2 V | Viewing Angle Phi 0° [typ.]120 ° | Chip TechnologyAlInGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 400 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]400 mW/sr | Forward Voltage [typ.]1.8 V | Viewing Angle Phi 0° [typ.]90 ° | Chip TechnologyInAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 800 mW/sr | | | Downloads26 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]800 mW/sr | Forward Voltage [typ.]3.2 V | Viewing Angle Phi 0° [typ.]90 ° | Chip TechnologyInAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 855.0, 260 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]855.0 | Radiant Intensity [typ.]260 mW/sr | Forward Voltage [typ.]3.2 V | Viewing Angle Phi 0° [typ.]150 ° | Chip TechnologyInAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 855.0, 180 mW/sr | | | Downloads28 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]855.0 | Radiant Intensity [typ.]180 mW/sr | Forward Voltage [typ.]1.8 V | Viewing Angle Phi 0° [typ.]150 ° | Chip TechnologyInAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 150 mW/sr | Simulation– | | Downloads28 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]150 mW/sr | Forward Voltage [typ.]1.5 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 60 mW/sr | Simulation– | | Downloads28 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]60 mW/sr | Forward Voltage [typ.]1.5 V | Viewing Angle Phi 0° [typ.]60 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 40 mW/sr | Simulation– | | Downloads28 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]40 mW/sr | Forward Voltage [typ.]1.5 V | Viewing Angle Phi 0° [typ.]120 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC850 nm, 845.0, 5 mW/sr | | | Downloads9 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]850 nm | Centroid Wavelength [max.]845.0 | Radiant Intensity [typ.]5 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]60 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC855 nm, 850.0, 350 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]855 nm | Centroid Wavelength [max.]850.0 | Radiant Intensity [typ.]350 mW/sr | Forward Voltage [typ.]2 V | Viewing Angle Phi 0° [typ.]90 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC855 nm, 850.0, 250 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]855 nm | Centroid Wavelength [max.]850.0 | Radiant Intensity [typ.]250 mW/sr | Forward Voltage [typ.]2 V | Viewing Angle Phi 0° [typ.]130 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC940 nm, 940.0, 75 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]75 mW/sr | Forward Voltage [typ.]1.3 V | Viewing Angle Phi 0° [typ.]35 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC940 nm, 940.0, 30 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]30 mW/sr | Forward Voltage [typ.]1.3 V | Viewing Angle Phi 0° [typ.]35 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC940 nm, 940.0, 1 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]150 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC940 nm, 940.0, 5 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]5 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC940 nm, 940.0, 0.8 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]0.8 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]150 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC940 nm, 940.0, 8 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]8 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]120 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC940 nm, 940.0, 5.5 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]5.5 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]90 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 1.5 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1.5 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]150 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 6 mW/sr | | | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]6 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]60 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 5 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]5 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 1 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 6 mW/sr | | | Downloads26 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]6 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]20 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 5 mW/sr | Simulation– | | Downloads6 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]5 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 1 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 1 mW/sr | | | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 1 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]1 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]140 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 30 mW/sr | Simulation– | | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]30 mW/sr | Forward Voltage [typ.]1.3 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 30 mW/sr | Simulation– | | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]30 mW/sr | Forward Voltage [typ.]1.3 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 120 mW/sr | Simulation– | | Downloads28 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]120 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]30 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 50 mW/sr | Simulation– | | Downloads28 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]50 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]60 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 30 mW/sr | Simulation– | | Downloads28 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]30 mW/sr | Forward Voltage [typ.]1.4 V | Viewing Angle Phi 0° [typ.]120 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC940 nm, 940.0, 2 mW/sr | | | Downloads9 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]940 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]2 mW/sr | Forward Voltage [typ.]1.2 V | Viewing Angle Phi 0° [typ.]60 ° | Chip TechnologyAlGaAs | | Design Kit – | |
 | | SPEC945 nm, 940.0, 300 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]945 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]300 mW/sr | Forward Voltage [typ.]1.9 V | Viewing Angle Phi 0° [typ.]90 ° | Chip TechnologyAlGaAs | | | |
 | | SPEC945 nm, 940.0, 220 mW/sr | | | Downloads27 files | Status Activei| Production is active. Expected lifetime: >10 years. | Peak Wavelength [typ.]945 nm | Centroid Wavelength [max.]940.0 | Radiant Intensity [typ.]220 mW/sr | Forward Voltage [typ.]1.9 V | Viewing Angle Phi 0° [typ.]130 ° | Chip TechnologyAlGaAs | | | |