ComponentsPassive ComponentsPower MagneticsGate Drive Transformers

WE-AGDT Auxiliary Gate Drive Transformer

EXTENDED

for SiC-MOSFET and IGBT

WE-AGDT Auxiliary Gate Drive Transformer

SizeDimen­sions3DL
(mm)		W
(mm)		H
(mm)		Mount
EP7
 11.3 10.95 11.94 SMT
EXT.2015
 15.32 20.48 10.3 SMT

LTSpice files

Characteristics

  • Interwinding capacitance down to <1 pF
  • Dielectric insulation up to 5.5 kV AC
  • Basic insulation up to 1000 Vrms / 1400 Vpk
  • Reinforced isolation up to 750 Vrms / 1060 Vpk
  • Safety: IEC62368-1 / IEC61558-2-16 / IEC 61800-5-1
  • AEC-Q200 Qualification
  • Operating temperature: -40 °C up to +130 °C
  • Common control voltages for SiC MOSFET’s
  • High Common-mode Transient Immunity (CMTI)
  • Flyback, LLC, Half-Bridge, Full-Bridge topologies
  • Up to 6 W output power
  • Wide range input voltages 6 V to 36 V
  • Different unipolar, bipolar, and dual output options
  • Reference designs with Analog Devices, Texas Instruments, STMicroelectronics, onsemi, and Infineon

Reference Designs

  • RD001 6 W Bipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver
  • RD002 6 W Unipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver
  • EVAL-2EP130R-PR-SIC Full bridge isolated gate driver supply - with dual output peak rectification for SiC
  • EVAL-2EP130R-VD Full bridge isolated gate driver supply - with dual output voltage doubler for IGBT
  • EVAL-2EP130R-PR Full bridge isolated gate driver supply - with dual output peak rectification

Applications

  • Industrial drives
  • AC motor inverters
  • HEV/EV charging station
  • Battery chargers
  • Solar inverters
  • Data centers
  • Uninterruptible power supplies
  • Active power factor correction
  • SiC, IGBT, GaN based power converters

Application Notes

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VIN(V)
VOut1(V)
VOut2(V)
VOut3(V)
Vaux(V)
PO(W)
CWW 1(pF)
L(mH)
ISAT(A)
∫Udt(Vµs)
fswitch(kHz)
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Version
IC Reference
Reference Design
SamplesAvailability & Sample
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WE-AGDT Auxiliary Gate Drive Transformer
750317493
SPEC15, 20 V, 20 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 120 V
Output Voltage 220 V
–
–
Total Output Power4 W
Interwinding Capacitance7 pF
Inductance0.9 mH
–
Voltage-µSecond147 Vµs
Switching Frequency 100
Turns Ratio1:1.07:1.07 
VersionHalf-Bridge 
IC ReferenceIR2085S 
Reference Design
Infineon Technologies
Request
WE-AGDT Auxiliary Gate Drive Transformer
750317893
SPEC9 - 18, 19 V, –
Simu­lation
Availability
Request
Downloads10 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 9 - 18
Output Voltage 119 V
–
–
–
Total Output Power3 W
Interwinding Capacitance6.8 pF
Inductance0.018 mH
Saturation Current1.95 A
–
Switching Frequency 350
Turns Ratio1:2 
VersionFlyback 
IC ReferenceLM5180 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750317894
SPEC9 - 18, 15 V, -4 V
Simu­lation
Availability
Request
Downloads10 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 9 - 18
Output Voltage 115 V
Output Voltage 2-4 V
–
–
Total Output Power3 W
Interwinding Capacitance7 pF
Inductance0.018 mH
Saturation Current1.6 A
–
Switching Frequency 350
Turns Ratio2.25:3.5:1 
VersionFlyback 
IC ReferenceLM5180 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750318016
SPEC15, 29 V, 29 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 129 V
Output Voltage 229 V
–
–
Total Output Power4.7 W
Interwinding Capacitance6 pF
Inductance0.9 mH
–
Voltage-µSecond157 Vµs
Switching Frequency 100
Turns Ratio1:1.07:1.07 
VersionHalf-Bridge 
IC ReferenceIR2085S 
Reference Design
Infineon Technologies
Request
WE-AGDT Auxiliary Gate Drive Transformer
750318114
SPEC9 - 18, 19 V, –
Simu­lation
Availability
Request
Downloads10 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 9 - 18
Output Voltage 119 V
–
–
–
Total Output Power6 W
Interwinding Capacitance6.8 pF
Inductance0.006 mH
Saturation Current6.2 A
–
Switching Frequency 350
Turns Ratio1:2 
VersionFlyback 
IC ReferenceLT8302 
Reference Design
Analog Devices
Request
WE-AGDT Auxiliary Gate Drive Transformer
750318131
SPEC9 - 18, 15 V, -4 V
Simu­lation
Availability
Request
Downloads10 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 9 - 18
Output Voltage 115 V
Output Voltage 2-4 V
–
–
Total Output Power6 W
Interwinding Capacitance7.5 pF
Inductance0.007 mH
Saturation Current5 A
–
Switching Frequency 350
Turns Ratio2.25:3.5:1 
VersionFlyback 
IC ReferenceLT8302 
Reference Design
Analog Devices
Request
WE-AGDT Auxiliary Gate Drive Transformer
750318207
SPEC18 - 36, 19 V, –
Simu­lation
Availability
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Downloads10 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 18 - 36
Output Voltage 119 V
–
–
–
Total Output Power5 W
Interwinding Capacitance8.2 pF
Inductance0.027 mH
Saturation Current2 A
–
Switching Frequency 350
Turns Ratio1:1.2 
VersionFlyback 
IC ReferenceLM5180 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750318208
SPEC18 - 36, 15 V, -4 V
Simu­lation
Availability
Request
Downloads10 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 18 - 36
Output Voltage 115 V
Output Voltage 2-4 V
–
–
Total Output Power5 W
Interwinding Capacitance7 pF
Inductance0.027 mH
Saturation Current1.5 A
–
Switching Frequency 350
Turns Ratio3.5:3.5:1 
VersionFlyback 
IC ReferenceLM5180 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750318616
SPEC7 - 31, 27 V, –
Simu­lation
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 7 - 31
Output Voltage 127 V
–
–
Auxiliary Voltage13 V
Total Output Power2.7 W
Interwinding Capacitance3.25 pF
Inductance0.01 mH
Saturation Current2 A
–
Switching Frequency 400
Turns Ratio1.2:2:1 
VersionFlyback 
IC ReferenceSTGAP4S 
Reference Design –
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319077
SPEC12 - 18, 15 V, 7.5 V
Simu­lation
Availability
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Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 12 - 18
Output Voltage 115 V
Output Voltage 27.5 V
Output Voltage 37.5 V
Auxiliary Voltage5 V
Total Output Power1.5 W
Interwinding Capacitance7.8 pF
Inductance0.042 mH
Saturation Current1.25 A
–
Switching Frequency 150
Turns Ratio2:2.86:1.43:1.43:1 
VersionFlyback 
IC ReferenceNCV(P)3064 
Reference Design
Onsemi
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319177
SPEC7.5, 13 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 7.5
Output Voltage 113 V
–
–
–
Total Output Power4.55 W
Interwinding Capacitance0.68 pF
Inductance0.0165 mH
–
Voltage-µSecond36 Vµs
Switching Frequency 500
Turns Ratio1:1.67 
VersionLLC 
IC ReferenceUCC25800 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319282
SPEC6 - 18, 20 V, 5 V
Simu­lation
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 6 - 18
Output Voltage 120 V
Output Voltage 25 V
Output Voltage 35 V
Auxiliary Voltage5 V
Total Output Power1.5 W
Interwinding Capacitance6.4 pF
Inductance0.042 mH
Saturation Current1.2 A
–
Switching Frequency 150
Turns Ratio1.56:3.89:1:1:1 
VersionFlyback 
IC ReferenceNCV(P)3064 
Reference Design
Onsemi
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319331
SPEC13, 11.5 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 13
Output Voltage 111.5 V
–
–
–
Total Output Power6 W
Interwinding Capacitance1.3 pF
Inductance0.05 mH
–
Voltage-µSecond60 Vµs
Switching Frequency 500
Turns Ratio1:1 
VersionLLC 
IC ReferenceUCC25800 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319374
SPEC13.5, 22.5 V, 22.5 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 13.5
Output Voltage 122.5 V
Output Voltage 222.5 V
–
–
Total Output Power5.9 W
Interwinding Capacitance4 pF
Inductance0.73 mH
–
Voltage-µSecond126 Vµs
Switching Frequency 97
Turns Ratio1.71:1:1 
VersionFull-Bridge 
IC Reference2EP130R 
Reference Design
Infineon Technologies
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319375
SPEC15, 22.5 V, 22.5 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 122.5 V
Output Voltage 222.5 V
–
–
Total Output Power5.9 W
Interwinding Capacitance3 pF
Inductance0.71 mH
–
Voltage-µSecond105 Vµs
Switching Frequency 65
Turns Ratio1.25:1:1 
VersionFull-Bridge 
IC Reference2EP130R 
Reference Design
Infineon Technologies
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319376
SPEC15, 19 V, 19 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 119 V
Output Voltage 219 V
–
–
Total Output Power6 W
Interwinding Capacitance2.7 pF
Inductance0.75 mH
–
Voltage-µSecond95 Vµs
Switching Frequency 65
Turns Ratio1.5:1:1 
VersionFull-Bridge 
IC Reference2EP130R 
Reference Design
Infineon Technologies
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319377
SPEC15, 20.5 V, 20.5 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 120.5 V
Output Voltage 220.5 V
–
–
Total Output Power6 W
Interwinding Capacitance1.6 pF
Inductance0.47 mH
–
Voltage-µSecond74 Vµs
Switching Frequency 65
Turns Ratio1.4:1:1 
VersionFull-Bridge 
IC Reference2EP130R 
Reference Design
Infineon Technologies
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319496
SPEC9 - 18, 20 V, 5 V
Simu­lation
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 9 - 18
Output Voltage 120 V
Output Voltage 25 V
–
–
Total Output Power6 W
Interwinding Capacitance7.3 pF
Inductance0.007 mH
Saturation Current4.5 A
–
Switching Frequency 350
Turns Ratio1.8:3.6:1 
VersionFlyback 
IC ReferenceLT8302 
Reference Design
Analog Devices
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319497
SPEC9 - 18, 19 V, 4 V
Simu­lation
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 9 - 18
Output Voltage 119 V
Output Voltage 24 V
–
–
Total Output Power6 W
Interwinding Capacitance7.5 pF
Inductance0.007 mH
Saturation Current4.5 A
–
Switching Frequency 350
Turns Ratio2.25:4.25:1 
VersionFlyback 
IC ReferenceLT8302 
Reference Design
Analog Devices
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319565
SPEC15, 30 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 130 V
–
–
–
Total Output Power3 W
Interwinding Capacitance2.1 pF
Inductance0.256 mH
–
Voltage-µSecond72 Vµs
Switching Frequency 250
Turns Ratio1:2 
VersionHalf-Bridge 
–
Reference Design –
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319831
SPEC15, 6 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 16 V
–
–
–
–
Interwinding Capacitance2 pF
Inductance0.056 mH
–
Voltage-µSecond64 Vµs
Switching Frequency 500
Turns Ratio2.2:1 
VersionLLC 
IC ReferenceUCC25800 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319832
SPEC15, 7.5 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 17.5 V
–
–
–
–
Interwinding Capacitance2 pF
Inductance0.056 mH
–
Voltage-µSecond64 Vµs
Switching Frequency 500
Turns Ratio1.83:1 
VersionLLC 
IC ReferenceUCC25800 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319833
SPEC15, 12 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 112 V
–
–
–
–
Interwinding Capacitance2 pF
Inductance0.067 mH
–
Voltage-µSecond70 Vµs
Switching Frequency 500
Turns Ratio1.2:1 
VersionLLC 
IC ReferenceUCC25800 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319834
SPEC7.5, 7.5 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 7.5
Output Voltage 17.5 V
–
–
–
–
Interwinding Capacitance2.6 pF
Inductance0.067 mH
–
Voltage-µSecond70 Vµs
Switching Frequency 500
Turns Ratio1:1.08 
VersionLLC 
IC ReferenceUCC25800 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319835
SPEC7.5, 9 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 7.5
Output Voltage 19 V
–
–
–
–
Interwinding Capacitance2.1 pF
Inductance0.023 mH
–
Voltage-µSecond40 Vµs
Switching Frequency 500
Turns Ratio1:1.29 
VersionLLC 
IC ReferenceUCC25800 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319836
SPEC6, 9 V, –
Simu­lation–
Availability
Request
Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Input Voltage 6
Output Voltage 19 V
–
–
–
–
Interwinding Capacitance2 pF
Inductance0.023 mH
–
Voltage-µSecond40 Vµs
Switching Frequency 500
Turns Ratio1:1.57 
VersionLLC 
IC ReferenceUCC25800 
Reference Design
Texas Instruments
Request
WE-AGDT Auxiliary Gate Drive Transformer
750319917
SPEC15.5, 38 V, 38 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 15.5
Output Voltage 138 V
Output Voltage 238 V
–
–
Total Output Power4.6 W
Interwinding Capacitance8.8 pF
Inductance0.9 mH
–
Voltage-µSecond147 Vµs
Switching Frequency 100
Turns Ratio1:1.71:1.71 
VersionFull-Bridge 
IC Reference2EP130R 
Reference Design
Infineon Technologies
Request
WE-AGDT Auxiliary Gate Drive Transformer
750320012
SPEC12, 12 V, 12 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 12
Output Voltage 112 V
Output Voltage 212 V
–
–
Total Output Power2.4 W
Interwinding Capacitance4.1 pF
Inductance0.064 mH
–
Voltage-µSecond74 Vµs
Switching Frequency 500
Turns Ratio1:1.14:1.14 
VersionLLC 
IC ReferenceUCC25800 
Reference Design –
Request
WE-AGDT Auxiliary Gate Drive Transformer
750320925
SPEC15, 20.5 V, 20.5 V
Simu­lation–
Availability
Request
Downloads9 files

Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Input Voltage 15
Output Voltage 120.5 V
Output Voltage 220.5 V
–
–
Total Output Power6 W
Interwinding Capacitance3.4 pF
Inductance0.47 mH
–
Voltage-µSecond74 Vµs
Switching Frequency 65
Turns Ratio1.4:1:1 
VersionFull-Bridge 
IC Reference2EP130R 
Reference Design
Infineon Technologies
Request

Drive hard. Drive safe.

Auxiliary Gate Drive Übertrager

The WE-AGDT series from Würth Elektronik allows implementing discrete SiC gate driver designs easier than ever before. These standard parts are compact SMT transformers optimized for silicon carbide applications. With extremely low interwinding capacitance, the WE-AGDT helps to achieve higher Common Mode Transient Immunity (CMTI).

The series is compliant with safety standards according to IEC62368-1 / IEC61558-2-16 in addition to AEC-Q200 qualification. Reference designs are available for each WE-AGDT transformer. The complete solution is compact and capable of fully automated assembly.

alttext yt_img_for_code_LK_80Fa0M9o.jpg 1712832586

Impact of Interwinding Capacitance

we-agdt-minimizing-displacement-current

Importance of minimizing displacement current / common-mode current

SiC-MOSFETs can switch extremely fast, causing very high rates of rise and fall of voltage (dv/dt) across the device terminals and in turn, across the isolation barrier parasitic capacitances, which are a contribution of the transformer in the auxiliary supply (Ciso-xfmr) and the gate driver IC controller or digital isolator used (Ciso-drv). 

As a result, common-mode displacement currents are generated which, if high enough, may cause loss of control of the SiC-MOSFET device as well as EMI issues, since high dv/dt also appears across PCB nodes and Earth/Chassis. The lower the parasitic capacitance, the lower the displacement currents generated, helping to prevent such issues.

we-agdt-comparison

Compared to regular transformers

The WE-AGDT transformers have been engineered with extremely-low interwinding capacitance in order to help the application withstand higher switching speeds (dv/dt), and with it to achieve higher efficiency as well as a smaller solution size and lower system cost. 

Compared to regular, same-sized transformers, the WE-AGDT feature less than half of the parasitic capacitance, as required by state-of-the-art SiC-MOSFET and IGBT applications. 
 

Reference Designs

Suitable for high-performance SiC and IGBT gate driver applications.
Highly compact solution with regulated bipolar output rails upto 6 W power
Well regulated positive output voltage over the full output power range
Well regulated negative output voltage over the full output power range
High efficiency over the entire output power range reaching 86% peak and 84% at 6 W output power

SiC Gate Driver System

One of the main applications of high-voltage SiC-MOSFETs and IGBTs is in high-power AC inverters and AC-Motor drives. Such power stages are built by ‘paralleling’ several half-bridge configurations of SiC devices in order to generate the different phase currents and voltages for the load. 

Each of the SiC-MOSFET devices typically has its own isolated gate driver system formed by the gate driver IC and the auxiliary supply (e.g. Würth Elektronik RD001 reference design with WE-AGDT).

A simplified schematic of an example application of a 3-phase inverter formed by three half-bridge stages paralleled and six SiC-MOSFET devices in total is shown in the image, in addition to a detail connection of the isolated auxiliary supply, isolated gate driver IC and the corresponding SiC-MOSFET device.

WE-AGDT_Kampagnenflyer_Bilder_Landingpage_Gate-Drive_1

Applications

Solar Inverters
EV-Chargers
Industrial Motor Drives
Datacenter Power
Switch-mode Power Supplies and Power Factor Correction Stages

Products of interest

WE-GDT Gate-Drive-Transformer
WE-GDTI Gate-Drive-Transformer

Videos

WE meet @ Digital Days 2020: SiC Gate Driver Systems with WE-AGDT series

Learn more