Emil Nierges studied electronics, telecommunications and information technology at the Technical University of Cluj-Napoca, Romania where he graduated with a degree in Electrical Engineering. After graduation he moved to Canada and worked in the hardware development of telecommunication testing products. In 2012 he relocated to Germany to join Wurth Electronics Midcom as a Product Applications Engineer supporting leading IC manufacturers with custom magnetics for reference designs. In 2019 Emil was promoted to a Product Management role with a focus on developing standard magnetic components.
All Application Notes by Emil Nierges
-
![Profile picture: Emil Nierges -]()
- Emil Nierges
6 W Unipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver
RD002
RD002
6 W Unipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver
RD002
CONTINUE READING
-
![Profile picture: Emil Nierges -]()
- Emil Nierges
- 25.05.22
- Reading time: 10 Min.
- Eleazar Falco ;
6 W Bipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver
RD001
RD001
6 W Bipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver
RD001
CONTINUE READING
- Eleazar Falco ;
- 08.02.22
- Reading time: 10 Min.
-
![Profile picture: Emil Nierges -]()
- Emil Nierges
Auxiliary supply requirements for SiC/GaN gate driver systems
ANP082
ANP082
Auxiliary supply requirements for SiC/GaN gate driver systems
ANP082
CONTINUE READING
-
![Profile picture: Emil Nierges -]()
- Emil Nierges
- 04.02.22
- Reading time: 10 Min.