ICeGaN™ devices in a Critical Conduction Mode (CrCM) Totem-Pole Power Factor Correction (TPPFC) converter, bring two key benefits; higher efficiency and power density than Si MOSFETs, and simplicity of driving compared to discrete e-GaN devices.

ICeGaN transistors are single chip e-GaN HEMT that can be driven like a Si MOSFET and require only 2 external SMD components, eliminating the need for special gate drivers, complex operating circuits, negative voltage supply, or additional clamping components.

Presentation: ICeGaN™ advantages in high-efficiency critical conduction mode totem-pole PFC