This presentation was part of our virtual conference (26-29 Apr): WE meet @ Digital Days 2021 Gallium-Nitride (GaN) technology is transforming Switched-Mode Power Supplies (SMPS) by realizing higher power densities and smaller power supplies. However, a GaN transistor’s switching speed is intrinsically faster than even the latest MOSFET technologies, posing significant design challenges in achieving the needed robustness to avoid catastrophic failure. Currently, the limiting factor in GaN-based SMPS performance is the gate-driver. This presentation describes the pitfalls of GaN gate-driving and the advancements developed by MinDCet for maximizing performance of a GaN power stage.

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