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Details
| Topologie | Leistungsfaktor-Korrektur |
| Eingangsspannung | 85-260 V |
| Ausgang 1 | 390 V |
| IC-Revision | 1.1 |
Beschreibung
The Evaluation Board for a bridgeless totem-pole Power-Factor-Correction (PFC) circuit, using Transphorm GaN power HEMTs, is described in this paper. In this board, by using a diode-free GaN power HEMT bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized. In this circuit, the performance and efficiency improvement, achieved by use of the GaN HEMTs in the fast-switching leg of the circuit, is further enhanced by use of low resistance MOSFETs in the slow-switching leg.
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Produktserie | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (AC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7448031501 | SPEC | 9 Dateien | WE-CMBNC Stromkompensierte Netzdrossel Nanokristallin | 15 | 1 | 3.2 | 300 | 2100 | Nanokristallin | 24 | 17 | 25 | THT |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 7448031501 | SPEC |
| Muster |
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| Artikel Nr. | Datenblatt | Simulation | Downloads | Produktserie | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (AC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Montageart | Muster |
|---|