IC-Hersteller Texas Instruments

IC-Hersteller (96)

Texas Instruments AMC1306M05 | Demoboard TIDA-010039_Power Card

Small Reinforced Isolated Modulator With ±50mV Input and CMOS Interface

Details

TopologieSonstige Topologie
Eingangsspannung380-400 V
Ausgang 1800 V / 12.5 A
IC-RevisionE3

Beschreibung

This reference design provides an overview on how to implement a three-level, three-phase, SiC-based AC/DC converter with bi-directional functionality. A high switching frequency of 50 kHz reduces the size of magnetics for the filter design and as a result a higher power density. SiC MOSFETs with switching loss enable higher DC bus voltages of up to 800V and lower switching losses with a peak efficiency of >97%. This design is configurable to work as a two-level or three-level rectifier.

Eigenschaften

  • Rated nominal input of 380 - 400VAC peak, with DC output of 800V
  • Maximum 10-kW, 10-kVA output power at 400-VAC 50- or 60-Hz grid connection
  • High-voltage (1200-V) SiC MOSFET-based fullbridge AC/DC converter for peak efficiency of >97%
  • Compact filter by switching rectifier at 50 kHz
  • Isolated driver ISO5852S with reinforced isolation for driving high-voltage SiC MOSFET and UCC5320S for driving middle Si IGBT
  • Isolated current sensing using AMC1301 for load current monitoring
  • TMS320F28379D control card for digital control

Typische Anwendungen

  • DC Charging (Pile) Station, EV Charging Station Power Module, Energy Storage Power Conversion System (PCS), Three Phase UPS

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
CVR
(V (DC))
dV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOBetriebstemperaturRaster
(mm)
L
(mm)
L
(µH)
IRP,40K
(A)
ISAT
(A)
BauformVersionVinVOut1
(V (DC))
IOut1
(A)
Isolierungstypfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (RMS))
MontageartEndurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
DF
(%)
Ø D
(mm)
Z
(mΩ)
RESR
(Ω)
W
(mm)
H
(mm)
IR 1
(mA)
TiTl
(mm)
PinsZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypIR
(mA)
Z @ 1 GHz
(Ω)
ReihenG
(mm)
GenderVerpackung Muster
150060VS55040SPEC
6 Dateien WL-SMCD SMT Mono-color Chip LED Diffused 573 Hellgrün 575 60 2 AlInGaP 140 1.6 0603 0.8 0.4 Tape and Reel
742792662SPEC
9 Dateien WE-CBF SMT-Ferrit -55 °C bis zu +125 °C 1.6 0603 SMT SMT 0.8 0.8 600 1000 1050 120 MHz 830 0.3 Breitband 600 186
74279228260SPEC
8 Dateien WE-MPSB EMI Multilayer Power Suppression Bead 1.6 0603 SMT SMT 0.8 0.8 26 39 515 MHz 6500 0.008 High Current 6500 33
74279221111SPEC
8 Dateien WE-MPSB EMI Multilayer Power Suppression Bead 3.2 1206 SMT SMT 1.6 1.1 110 118 150 MHz 5400 0.015 High Current 5400 44
7447709220SPEC
8 Dateien WE-PD Speicherdrossel 12 22 7 6.5 1210 Standard 12 10 0.028 5300
860080675015SPEC
7 Dateien WCAP-ATLI Aluminium-Elektrolytkondensatoren220 µF 50 -55 °C bis zu +105 °C 5 16 5000 1385 110 8 10 Ammopack
865060653010SPEC
8 Dateien WCAP-ASLL Aluminium-Elektrolytkondensatoren100 µF 501 MΩ -55 °C bis zu +105 °C 10.5 8.0 x 10.5 SMT V-Chip SMT 5000 350 50 12 8 340 0.227529 8.3 15" Tape & Reel
875105444004SPEC
7 Dateien WCAP-PSLP Aluminium-Polymer-Kondensatoren33 µF 20 -55 °C bis zu +105 °C 6.6 5.8 6.3 x 5.8 V-Chip SMT 2000 2200 600 8 6.3 0.035 6.6 15" Tape & Reel
750313638SPEC
7 Dateien WE-PPTI Push-Pull Transformers -40 °C bis zu +125 °C; including temp rise 9.14 340 1209 Push-Pull 5 V (DC) 5 0.65 Reinforced 300 - 620 10 1:1.3 5000 SMT 12.7 7.62 Tape and Reel
61300211121SPEC
6 Dateien WR-PHD 2.54 mm THT Pin Header1000 MΩ 2.54 5.08 THT 2 Gerade 3000 Single Pin Header Beutel
74650073RSPEC
6 Dateien WP-THRBU REDCUBE THR with internal through-hole thread THR 7 3 M3 2.5 4 50000 Tape and Reel
890303325008CSSPEC
8 Dateien WCAP-FTBP Folienkondensatoren150 nF 630 200 0.130000 MΩ -40 °C bis zu +105 °C 15 18 Pitch 15 mm THT 0.06122 7 13 4 Karton
750343811SPEC
4 Dateien Inductor 42 9.5 15 Toroid THT 27 42 4 Tray
750343810SPEC
4 Dateien Inductor 67.5 340 24 Toroid THT 67.5 39.88 4 Tray
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
CVR
(V (DC))
dV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOBetriebstemperaturRaster
(mm)
L
(mm)
L
(µH)
IRP,40K
(A)
ISAT
(A)
BauformVersionVinVOut1
(V (DC))
IOut1
(A)
Isolierungstypfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (RMS))
MontageartEndurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
DF
(%)
Ø D
(mm)
Z
(mΩ)
RESR
(Ω)
W
(mm)
H
(mm)
IR 1
(mA)
TiTl
(mm)
PinsZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypIR
(mA)
Z @ 1 GHz
(Ω)
ReihenG
(mm)
GenderVerpackung Muster