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IC-Hersteller Novosense Micro

Novosense Micro NSi6602

48V to 12V 240W Half-bridge EVM

Details

TopologieGegentaktwandler (Halbbrücken)
Eingangsspannung36-60 V
Ausgang 112 V / 20 A
IC-Revision1.0

Beschreibung

This application guide introduces an isolated half-bridge synchronous rectifier power supply evaluation module with 48V input, 240W 12V output, 200KHz switching frequency and maximum efficiency up to 95% for communication systems.

Eigenschaften

  • Isolated dual-channel gate driver
  • 5kV RMS isolation withstand voltage
  • Input-side supply voltage: 2.7V to 5.5V
  • Drive-side supply voltage: up to 25V
  • 4A drive current and 6A absorption current
  • Up to 150KV/us common mode transient immunity
  • 19ns typical propagation delay
  • 5ns maximum transmission delay matching
  • 6ns maximum pulse width distortion
  • Programmable dead time
  • AEC-Q100 certification
  • Over-current and over-temperature protection mechanism
  • Operating temperature range: -40℃~125℃

Typische Anwendungen

  • Isolated DC-DC and AC-DC power supplies for servers, telecommunications and industry, DC-AC solar inverters, Motor drives and EV charging, UPS and battery chargers

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCVR
(V (DC))
Endurance
(h)
BetriebstemperaturIRIPPLE
(mA)
ILeak
(µA)
DF
(%)
Raster
(mm)
Ø D
(mm)
L
(mm)
Technische ArtikelnummerL
(µH)
IRP,40K
(A)
LR
(µH)
ISAT,10%
(A)
RDC
(mΩ)
fres
(MHz)
MaterialVersion Muster
860040875005SPEC
6 Dateien WCAP-ATUL Aluminium-Elektrolytkondensatoren100 µF 100 7000 -40 °C up to +105 °C 800 100 9 5 10 25 ATDF250101M100DSPAAG000
744316047SPEC
8 Dateien WE-HCI SMT-Hochstrominduktivität -40 °C bis zu +150 °C 5.5 0.47 19.5 0.34 8 2.75 280 Superflux SMT
74435580330SPEC
8 Dateien WE-HCI SMT-Hochstrominduktivität -40 °C bis zu +125 °C 22.5 3.3 33.2 2.85 27.5 1.7 26.5 MnZn SMT
Artikel Nr. Daten­blatt Simu­lation
860040875005SPEC
744316047SPEC
74435580330SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCVR
(V (DC))
Endurance
(h)
BetriebstemperaturIRIPPLE
(mA)
ILeak
(µA)
DF
(%)
Raster
(mm)
Ø D
(mm)
L
(mm)
Technische ArtikelnummerL
(µH)
IRP,40K
(A)
LR
(µH)
ISAT,10%
(A)
RDC
(mΩ)
fres
(MHz)
MaterialVersion Muster