IC manufacturers GaN Systems

IC manufacturers (95)

GaN Systems HEY1011-L12C | Demoboard GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Overview

TopologyHalf-Bridge Converter symmetrical isolated
IC revision220215

Description

The GS-065-060-3-B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-3-B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

Features

  • 650 V enhancement mode power transistor
  • Bottom-cooled, low inductance GaNPX® package
  • RDS(on) = 25 mΩ
  • IDS(max) = 60 A
  • Simple gate drive Requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant

Typical applications

  • 3 kW Server AC/DC power supply
  • Residential Energy Storage System (ESS)
  • 3 ~ 7 kW PV Inverter, Motor Drive / VFD

Products

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Packaging Samples
61300611121SPEC
6 files WR-PHD 2.54 mm THT Pin Header 6 Single Pin Header Straight 3 Bag
Order Code Data­sheet
61300611121SPEC
Samples
Order Code Data­sheet Downloads Product seriesPinsRowsGenderTypeIR
(A)
Packaging Samples