<BR>Wurth Elektronik - Power Magnetics - Transformers For DC/DC Converter - WE-AGDT<br><Hr>
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<B><I><span style='font-size:26pt;
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---------------------------<BR><b>Würth Elektronik</b></FONT>
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<B> More than you expect<BR></B>
<HR><BR>
<b>Würth Elektronik eiSos GmbH & Co. KG</b><br>
EMC & Inductive Solutions<br>
Max-Eyth-Str.1<br>
D-74638 Waldenburg<br>
<br>
Tel: +49 (0)7942-945-0<br>
Fax:+49 (0)7942-945-5000<br>
<br>
<a href="http://www.we-online.com/web/en/electronic_components/produkte_pb/bauteilebibliotheken/eagle_4.php">www.we-online.com/eagle</a><br>
<a href="mailto:libraries@we-online.com">libraries@we-online.com</a>
<br><HR><BR>
Neither Autodesk nor Würth Elektronik eiSos does warrant that this library is error-free or <br>
that it meets your specific requirements.<br><BR>
Please contact us for more information.<br>
<HR>
<br>Eagle Version 9, Library Revision 2022a, 2022-07-20<br>
<HR><br>
Copyright: Würth Elektronik
<B>WE-AGDT Auxiliary Gate Drive Transformer
<BR><BR></B>Size: EP7,SMT,8Pins
<br>L X W X H= 11.3mm X 10.95mm X 11.94mm
>NAME
>VALUE
<B>WE-AGDT Auxiliary Gate Drive Transformer
<BR>
<BR></B>Size: EP7,SMT,8Pins
<br>L X W X H= 11.3mm X 10.95mm X 11.94mm
>NAME
>VALUE
<B>WE-AGDT Auxiliary Gate Drive Transformer
<BR><BR></B>Size: EP7,SMT,8Pins
<br>L X W X H= 11.3mm X 10.95mm X 11.94mm
<B>WE-AGDT Auxiliary Gate Drive Transformer
<BR>
<BR></B>Size: EP7,SMT,8Pins
<br>L X W X H= 11.3mm X 10.95mm X 11.94mm
>NAME
>VALUE
N1
N2
N3
>NAME
>VALUE
N1
N2
N3
>NAME
>VALUE
N1
N2
>NAME
>VALUE
N1
N2
>NAME
>VALUE
N1
N2
N3
>NAME
N1
>VALUE
N2
N5
N3
N4
6
6
>NAME
>VALUE
N1
N2
>NAME
N1
>VALUE
N2
>NAME
N1
>VALUE
N2
>NAME
N1
>VALUE
N2
>NAME
N1
>VALUE
N2
N3
>NAME
N1
>VALUE
N2
N3
>NAME
N1
>VALUE
N2
N5
N3
N4
6
6
>NAME
N1
>VALUE
N2
N3
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Updated by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Created by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Created by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Updated by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Created by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Updated by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Created by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Created by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Created by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Updated by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Created by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Created by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Updated by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to 6.8 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback with primary side regulation
<br>Up to 6 W output power
<br>Wide range input voltages 9 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices and Texas Instruments
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/catalog/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/catalog/WE-AGDT</a><p>
Updated by Ella Wu 2022-07-20<br>
2022 (C) Wurth Elektronik
Since Version 8.3, EAGLE supports URNs for individual library
assets (packages, symbols, and devices). The URNs of those assets
will not be understood (or retained) with this version.
Since Version 8.3, EAGLE supports the association of 3D packages
with devices in libraries, schematics, and board files. Those 3D
packages will not be understood (or retained) with this version.